Semiconductor material doping

A device comprising:

• a radiation generating structure;
• and
• a superlattice layer at least partially transparent to radiation generated by the radiation generating structure, wherein the superlattice layer comprises:
• a quantum well having a quantum well doping level for a quantum well dopant;
• and
• an adjacent barrier formed of a group III nitride material selected such that the adjacent barrier has a transparency of at least a target transparency to the radiation generated by the radiation generating structure and having a barrier doping level for a barrier dopant, wherein a valence band discontinuity between the quantum well and the adjacent barrier in the structure, the quantum well doping level, and the target barrier doping level facilitate a real space transfer of holes across the barrier.

A method of fabricating a deep ultraviolet light emitting device, the method comprising:

• forming a deep ultraviolet light generating structure;
• and
• forming a superlattice layer at least partially transparent to the deep ultraviolet radiation generated by the deep ultraviolet light generating structure, wherein the superlattice layer comprises:
• a quantum well having a quantum well doping level for a quantum well dopant;
• and
• an adjacent barrier formed of a group III nitride material selected such that the adjacent barrier has a transparency of at least a target transparency to the radiation generated by the radiation generating structure and having a barrier doping level for a barrier dopant, wherein a valence band discontinuity between the quantum well and the adjacent barrier in the structure, the quantum well doping level, and the target barrier doping level facilitate a real space transfer of holes across the barrier.