Photodetector, liquid crystal display device, and light-emitting device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYoshiyuki Kurokawa, Takayuki Ikeda
Life of this patent
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Abstract
One embodiment of the present invention includes a first light-blocking layer and a second light-blocking layer which are over a light-transmitting substrate, a first photodiode over the first light-blocking layer, a second photodiode over the second light-blocking layer, a first color filter covering the first photodiode, a second color filter covering the second photodiode, and a third light-blocking layer formed using the first color filter and the second color filter and disposed between the first photodiode and the second photodiode.
Claims20
A semiconductor device comprising:
- a first light-transmitting insulating layer over a light-transmitting substrate;
- a photodiode over and in contact with the first light-transmitting insulating layer, the photodiode comprising an oxide semiconductor film;
- a second light-transmitting insulating layer over and covering the photodiode;
- a first color filter over and covering the second light-transmitting insulating layer, the first color filter in contact with the first light-transmitting insulating layer;
- and
- a second color filter in contact with the first light-transmitting insulating layer and the first color filter.
A semiconductor device comprising:
- a first light-transmitting insulating layer over a light-transmitting substrate;
- a photodiode over and in contact with the first light-transmitting insulating layer, the photodiode comprising a first oxide semiconductor film;
- a transistor comprising a second oxide semiconductor film over and with the first light-transmitting insulating layer;
- a second light-transmitting insulating layer over and covering the photodiode;
- a first color filter over and covering the second light-transmitting insulating layer, the first color filter in contact with the first light-transmitting insulating layer;
- and
- a second color filter in contact with the first light-transmitting insulating layer and the first color filter.
A semiconductor device comprising:
- a first light-transmitting insulating layer over a light-transmitting substrate;
- a first photodiode over and in contact with the first light-transmitting insulating layer, the first photodiode comprising a first oxide semiconductor film;
- a second photodiode over and in contact with the first light-transmitting insulating layer, the second photodiode comprising a second oxide semiconductor film;
- a second light-transmitting insulating layer over the first photodiode and the second photodiode, the second light-transmitting insulating layer covering the first photodiode and the second photodiode;
- a groove in the second light-transmitting insulating layer, the groove reaching the first light-transmitting insulating layer;
- a first color filter in the groove, the first color filter in contact with the first light-transmitting insulating layer;
- and
- a second color filter in the groove, the second color filter in contact with the first light-transmitting insulating layer and the first color filter,
- wherein the groove is positioned between the first photodiode and the second photodiode.
Dependencies are inferred from the claim text.