Solid-state imaging device and method of manufacturing the solid-state imaging device

A solid-state imaging device in which a plurality of pixels are two-dimensionally arranged, the solid-state imaging device comprising:

• a semiconductor substrate;
• a plurality of photoelectric conversion units formed in the semiconductor substrate to correspond to the plurality of pixels and configured to generate signal charges by performing photoelectric conversion on incident light;
• and
• a plurality of color filters formed above the semiconductor substrate to correspond to the plurality of the pixels,
• wherein a low-refractive index region is formed in a region on a side of the semiconductor substrate between adjacent ones of the color filters and above a first insulating film, the low-refractive index region having a refractive index lower than refractive indices of the adjacent ones of the color filters,
• a first light-blocking portion disposed above the first insulating film and between the low-refractive index region and the semiconductor substrate,
• a second light-blocking portion disposed below the first insulating film and separated from the first light-blocking portion, the second light-blocking portion also being disposed between the low-refractive index region and the semiconductor substrate,
• each of the color filters is in contact with the adjacent ones of the color filters, above the low-refractive index region,
• the first insulating film includes a silicon oxide,
• a lower boundary of the first light-blocking portion, a lower boundary of the low-refractive index region and a lower boundary of the plurality of color filters are in direct contact with the first insulating film, and
• a thickness of each of the color filters is 300 to 1000 nm.