Schottky barrier diode and method of manufacturing the same

A method of manufacturing a Schottky barrier diode, comprising:

• forming an n− type epitaxial layer on a first surface of an n+ type silicon carbide substrate;
• injecting p+ ions into a surface of the n− type epitaxial layer to form a first p+ region;
• forming an n type epitaxial layer on the n− type epitaxial layer and the first p+ region;
• injecting p+ ions into a surface of the n type epitaxial layer to form a second p+ region that is in contact with the first p+ region;
• forming a Schottky electrode on the n type epitaxial layer and the second p+ region;
• and
• forming an ohmic electrode on a second surface of the n+ type silicon carbide substrate,
• wherein the first p+ region has a lattice shape including a plurality of vertical portions and horizontal portions connecting both ends of the respective vertical portions to each other,
• the vertical portions include a plurality of first portions shaped like a hexagon, a plurality of second portions connecting the respective first portions, and a plurality of third portions connecting the first portions and the horizontal portions, and
• each second portion and each third portion are shaped like a rod.