FinFET and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Yang Lee, Ting-Yeh Chen
Life of this patent
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Abstract
A method for manufacturing a FinFET, and FinFETs are provided. In various embodiments, the method for manufacturing a FinFET includes forming a fin structure over a substrate. Next, a dummy gate is deposited across over the fin structure. The method continues with forming a pair of first spacers on sidewalls of the dummy gate. Then, a source/drain region is formed in the fin structure not covered by the dummy gate. The method further includes removing the dummy gate to expose the fin structure. After that, the first spacers are truncated, and a gate stack is formed to cover the exposed fin structure and top surfaces of the first spacers.
Claims19
A FinFET, comprising:
- a fin structure over a substrate;
- a gate stack across the fin structure;
- a pair of first spacers on sidewalls of the gate stack;
- and
- a source/drain region in the fin structure not covered by the gate stack;
- a doped region in the fin structure and adjacent to the source/drain region;
- a contact etch stop layer over the source/drain region;
- and
- an interlayer dielectric layer over the contact etch stop layer,
- wherein the gate stack covers top surfaces of the first spacers.
A FinFET, comprising:
- a fin structure over a substrate;
- a gate stack across the fin structure;
- a pair of first spacers on sidewalls of the gate stack;
- a pair of second spacers adjacent to the first spacers;
- and
- a source/drain region in the fin structure not covered by the gate stack;
- a doped region in the fin structure and adjacent to the source/drain region;
- a contact etch stop layer over the source/drain region;
- and
- an interlayer dielectric layer over the contact etch stop layer,
- wherein the gate stack covers top surfaces of the first spacers or covers top surfaces of the first spacers and the second spacers.
Dependencies are inferred from the claim text.