Semiconductor device
AssigneeUnisantis Electronics Singapore Pte. Ltd.
InventorsFujio Masuoka, Hiroki Nakamura
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a fin-shaped silicon layer on a silicon substrate and a first insulating film around the fin-shaped silicon layer. A pillar-shaped silicon layer resides on the fin-shaped silicon layer. A gate electrode and gate insulating film surround the pillar-shaped silicon layer and a gate line is connected to the gate electrode and extends in a direction orthogonally intersecting the fin-shaped silicon layer. A first diffusion layer resides in an upper portion of the pillar-shaped silicon layer and a second diffusion layer resides in an upper portion of the fin-shaped silicon layer and a lower portion of the pillar-shaped silicon layer.
Claims1
A semiconductor device comprising:
- a fin-shaped silicon layer on a silicon substrate;
- a first insulating film around the fin-shaped silicon layer;
- a pillar-shaped silicon layer on the fin-shaped silicon layer;
- a gate insulating film around the pillar-shaped silicon layer;
- a gate electrode around the gate insulating film;
- a gate line connected to the gate electrode and extending in a direction orthogonally intersecting the fin-shaped silicon layer;
- a first diffusion layer in an upper portion of the pillar-shaped silicon layer;
- a second diffusion layer in an upper portion of the fin-shaped silicon layer and a lower portion of the pillar-shaped silicon layer;
- a first silicide in an upper portion of the first diffusion layer;
- a first metal wire on the first silicide;
- and
- a nitride film sidewall around a sidewall of an upper portion of the pillar-shaped silicon layer.
Dependencies are inferred from the claim text.