US 9,287,388 B2 · Nonvolatile semiconductor memory device and method for manufacturing same

Abstract

According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of U-shaped memory strings, each of the plurality of U-shaped memory strings including a first columnar body, a second columnar body, and a conductive connection body. The conductive connection body connects the first columnar body and the second columnar body. A plurality of first memory cells are connected in series in the first columnar body and are composed of a plurality of first conductive layers, a first inter-gate insulating film, a plurality of first floating electrodes, a first tunnel insulating film, and a first memory channel layer. The plurality of first floating electrodes are separated from the plurality of first conductive layers by the first inter-gate insulating film. A plurality of second memory cells are connected in series in the second columnar body, similally to the plurality of first memory cells.

Claims22

Dependent claims

A nonvolatile semiconductor memory device comprising:

a memory string having a plurality of memory cells electrically connected in series, the memory cells being stacked in a first direction, the memory string including,
a first semiconductor body extending in the first direction,
a plurality of first floating electrodes provided on a side surface of the first semiconductor body via a first insulating layer, the first floating electrodes being stacked in the first direction, and
a plurality of first conductive layers stacked in the first direction, one of the first conductive layers being provided on a side surface of one of the first floating electrodes via a second insulating layer,
the first conductive layers and the first floating electrodes including one of W, Ta, Ti, and Mo,
a thickness of one of the first conductive layers being the same as a thickness of one of the first floating electrodes provided beside the one of the first conductive layers.

3 more elements

A nonvolatile semiconductor memory device comprising:

a memory string having a plurality of memory cells electrically connected in series, the memory cells being stacked in a first direction, the memory string including,
a first semiconductor body extending in the first direction,
a plurality of first floating electrodes provided on a side surface of the first semiconductor body via a first insulating layer, the first floating electrodes being stacked in the first direction,
a plurality of first conductive layers stacked in the first direction, one of the first conductive layers being provided on a side surface of one of the first floating electrodes via a second insulating layer,
the first floating electrodes including a material of a work function larger than a work function of the first conductive layers, and
the first conductive layers including silicon containing an n-type impurity and the first floating electrodes including silicon containing a p-type impurity.

3 more elements

A nonvolatile semiconductor memory device comprising:

a memory string having a plurality of memory cells electrically connected in series, the memory cells being stacked in a first direction, the memory string including,
a first semiconductor body extending in the first direction,
a plurality of first floating electrodes provided on a side surface of the first semiconductor body via a first insulating layer, the first floating electrodes being stacked in the first direction,
a plurality of first conductive layers stacked in the first direction, one of the first conductive layers being provided on a side surface of one of the first floating electrodes via a second insulating layer,
a second semiconductor body provided beside the first semiconductor body, the second semiconductor body extending in the first direction,
a plurality of second floating electrodes provided on a side surface of the second semiconductor body via a third insulating layer, the second floating electrodes being stacked in the first direction,
a plurality of second conductive layers stacked in the first direction, one of the second conductive layers being provided on a side surface of one of the second floating electrodes via a fourth insulating layer,
a connection body connected to the first semiconductor body and the second semiconductor body,
the first floating electrodes including a material of a work function larger than a work function of the first conductive layers, the second floating electrodes including a material of a work function larger than a work function of the second conductive layers, and
the first conductive layers and the second conductive layers including conductive silicon and the first floating electrodes and the second floating electrodes including metal silicide.

7 more elements

Dependencies are inferred from the claim text.

Nonvolatile semiconductor memory device and method for manufacturing same

Life of this patent

Nonvolatile semiconductor memory device and method for manufacturing same

Life of this patent

Abstract

Claims22