Structure and method for semiconductor device

A method of forming a FinFET device, comprising:

• providing a silicon substrate with a first device region and a second device region, wherein the first device region includes a first silicon fin and the second device region includes a plurality of second silicon fins;
• etching a plurality of first recesses in an S/D region of the first silicon fin and a plurality of second recesses in S/D regions of the second silicon fins;
• growing a first plurality of first epitaxial features in the first recesses and a second plurality of first epitaxial features in the second recesses;
• growing a third plurality of second epitaxial features over the first plurality and a fourth plurality of second epitaxial features over the second plurality, wherein the third plurality merge into a merged second epitaxial feature and the fourth plurality separate from each other;
• and
• growing a third epitaxial feature over the merged second epitaxial feature, while keeping the fourth plurality separate from each other.

A semiconductor device, comprising:

• a substrate having a first device region and a second device region, wherein the first device region includes a first source/drain (S/D) region and the second device region includes a plurality of second S/D regions;
• a plurality of first recesses in the first S/D region;
• a first epitaxial feature having bottom portions and a top portion over the bottom portions, wherein each of the bottom portions is in one of the first recesses and the top portion is over the first S/D region;
• a plurality of second recesses, one in each of the second S/D regions;
• and
• a plurality of second epitaxial features each having a bottom portion in one of the second recesses, wherein the second epitaxial features separate from each other.