Thin film transistor and method for making the same

A thin film transistor comprising:

• an insulating layer having a first surface and a second surface;
• a gate electrode located on the first surface of the insulating layer;
• a source electrode;
• a drain electrode spaced from the source electrode;
• and
• a semiconductor layer electrically connected with the source electrode and the drain electrode;
• wherein the source electrode, the drain electrode, and the semiconductor layer are located on the second surface of the insulating layer;
• each of the gate electrode, the source electrode, and the drain electrode comprises a first carbon nanotube layer;
• the semiconductor layer comprises a second carbon nanotube layer, a first sheet resistance of the first carbon nanotube layer is smaller than or equal to 10 kΩ per square, and a second sheet resistance of the second carbon nanotube layer is greater than or equal to 100 kΩ per square;
• and the first carbon nanotube layer comprises a plurality of first carbon nanotubes joined by van der Waals attractive force, and the plurality of first carbon nanotubes is disorderly arranged.

A thin film transistor comprising:

• an insulating layer having a first surface and a second surface;
• a gate electrode located on the first surface of the insulating layer;
• a source electrode;
• a drain electrode spaced from the source electrode;
• and
• a semiconductor layer electrically connected with the source electrode and the drain electrode;
• wherein the source electrode, the drain electrode, and the semiconductor layer are located on the second surface of the insulating layer;
• each of the gate electrode, the source electrode, and the drain electrode comprises a first carbon nanotube layer;
• the semiconductor layer comprises a second carbon nanotube layer, a first sheet resistance of the first carbon nanotube layer is smaller than or equal to 10 kΩ per square, and a second sheet resistance of the second carbon nanotube layer is greater than or equal to 100 kΩ per square;
• and the second carbon nanotube layer comprises a plurality of second carbon nanotubes joined by van der Waals attractive force, and the plurality of second carbon nanotubes is disorderly arranged.