Memory arrays
AssigneeMicron Technology, Inc.
InventorsJohn M. Meldrim, Yushi Hu, Rita J. Klein, John D. Hopkins, Hongbin Zhu, Gordon A. Haller, Luan C. Tran
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Abstract
Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and vertically-stacked memory cell strings are along the channel material pillars. A common source is under the stack and electrically coupled to the channel material pillars. The common source has conductive protective material over and directly against metal silicide, with the conductive protective material being a composition other than metal silicide. Some embodiments include methods of fabricating integrated structures.
Claims8
A memory array, comprising:
- a stack of alternating first and second levels;
- channel material pillars extending through the stack;
- vertically-stacked memory cell strings along the channel material pillars;
- and
- a common source under the stack and electrically coupled to the channel material pillars;
- the common source comprising conductive protective material over and directly against metal silicide;
- the conductive protective material comprising a composition other than metal silicide, and including germanium and silicon.
Dependencies are inferred from the claim text.