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US 9,287,377 B2Granted
Semiconductor device and manufacturing method
AssigneeInfineon Technologies AG
InventorsUlrich Glaser, Peter Irsigler, Hans-Joachim Schulze
Life of this patent
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Abstract
A semiconductor device includes a trench extending into a semiconductor body from a first surface. At least one of a ternary carbide and a ternary nitride is in the trench.
Claims20
A semiconductor device, comprising:
- a trench extending into a semiconductor body from a first surface;
- and
- at least one of a ternary carbide and a ternary nitride in the trench,
- wherein the at least one of the ternary carbide and the ternary nitride fills the trench completely.
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A semiconductor device, comprising:
- a semiconductor body having opposite first and second surfaces;
- and
- at least one of a nitride and a carbide buried in the semiconductor body, wherein a second part of the semiconductor body is between the first surface and the at least one of the nitride and the carbide, and a first part of the semiconductor body is between the second surface and the at least one of the nitride and the carbide,
- wherein a melting point of the at least one of the nitride and the carbide is greater than 900° C.
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A method of manufacturing a semiconductor device, the method comprising:
- forming at least one of a nitride and a carbide on a first part of a semiconductor body;
- and
- burying the at least one of the nitride and the carbide in the semiconductor body by forming a second part of the semiconductor body on the first part and on the at least one of the nitride and the carbide by epitaxial growth.
A semiconductor device, comprising:
- a trench extending into a semiconductor body from a first surface;
- at least one of a ternary carbide and a ternary nitride in the trench, wherein the trench is a contact trench including the at least one of the ternary carbide and the ternary nitride as a conductive filling electrically coupled to the semiconductor body;
- and
- a contact layer comprising at least one of a silicide and a highly doped semiconductor material between the at least one of the ternary carbide and the ternary nitride and the semiconductor body.
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Dependencies are inferred from the claim text.