Transistor device and related manufacturing method
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorsYong Cheng, Hui Fang Song, Qian Cheng Ma
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Abstract
A transistor device may include a substrate that has a recess and a substrate surface, wherein the recess is recessed with respect to the substrate surface. The transistor device may further include a source and a drain that overlap the substrate. The transistor device may further include a gate structure that has a first gate structure portion and a second gate structure portion, wherein the first gate structure portion is positioned inside the recess, and wherein the second gate structure portion is connected to the first gate structure and is positioned outside the first recess.
Claims10
A transistor device comprising:
- a substrate that has a first recess and a first substrate surface, wherein the first recess is recessed with respect to the first substrate surface;
- a source that overlaps the substrate;
- a drain overlaps the substrate;
- and
- a gate structure that has a first gate structure portion and a second gate structure portion, wherein the first gate structure portion is positioned inside the first recess, wherein the second gate structure portion is connected to the first gate structure and is positioned outside the first recess, wherein a portion of the source and a portion of the drain extend underneath the first gate structure portion.
Dependencies are inferred from the claim text.