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US 9,287,374 B2Granted
Semiconductor device and method for forming the same
AssigneeSK hynix Inc.
InventorsYu Jun Lee, Kyoung Chul Jang
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Abstract
A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes an active region, a device isolation film, a first liner nitride film disposed over a lower portion of a sidewall of the active region, and a second liner nitride film disposed over an upper portion of the sidewall of the active region and having a higher density of nitrogen than a density of nitrogen in the first liner nitride film.
Claims17
A semiconductor device comprising:
- an active region;
- a device isolation film defining the active region;
- a first liner nitride film disposed over a lower part of a sidewall of the active region;
- a second liner nitride film disposed over only an upper part of the sidewall of the active region, the second liner nitride film having a higher density of nitrogen than a density of nitrogen in the first liner nitride film;
- and
- source/drain junction regions disposed in an upper portion of the active region, wherein the source/drain junction regions vertically overlap with the second liner nitride film.
3 more elements
A method for forming a semiconductor device, the method comprising:
- forming a device isolation trench defining an active region in a semiconductor substrate;
- forming a liner nitride film including a first liner nitride film disposed over a lower part of a sidewall of the active region and a second liner nitride film disposed over only an upper part of the sidewall of the active region, the second liner nitride film including a higher density of nitrogen than a density of nitrogen in the first liner nitride film;
- and
- forming source/drain junction regions in an upper portion of the active region, wherein the source/drain junction regions vertically overlap with the second liner nitride film.
1 more element
Dependencies are inferred from the claim text.