Semiconductor device
AssigneeInfineon Technologies AG
InventorMarkus Zundel
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes an active area having a source and a gate. A gate metal contact is deposited above and forms an electrical contact with the gate and a source metal contact is deposited above and forms an electrical contact with the source. The source metal contact includes a plurality of metal through contacts positioned adjacent a side of the active area, the plurality of metal through contacts being spaced at intervals from one another and arranged in two or more rows.
Claims14
A method of making a semiconductor device comprising:
- providing an active area comprising a source and a gate;
- depositing a gate metal contact above and forming an electrical contact with the gate, the gate metal contact arranged in a peripheral edge region of the semiconductor device;
- and
- depositing a source metal contact, bordered by two opposite long sides and two opposite short sides, above and forming an electrical contact with the source and comprising a plurality of metal through contacts positioned adjacent a side of the active area and laterally positioned between the gate in a cell field of the semiconductor device and the gate metal contact, the plurality of metal through contacts comprising a single metal through contact on each of the two short sides and a plurality of metal through contacts arranged at intervals spaced from one another on each of the two long sides.
A method of making a semiconductor device comprising:
- providing an active area comprising a source and a gate;
- depositing a gate metal contact above and forming an electrical contact with the gate;
- and
- depositing a source metal contact, bordered by two opposite long sides and two opposite short sides above and forming an electrical contact with the source and comprising a plurality of metal through contacts positioned adjacent a side of the active area, the plurality of metal through contacts comprising a single metal through contact on each of the two short sides and a plurality of metal through contacts arranged at intervals spaced from one another on each of the two long sides;
- wherein the semiconductor device comprises a top side having a central region and a peripheral edge region, and comprising providing the active area in the central region comprising the source and the gate and a cell field;
- wherein the cell field includes a trench, and wherein the source and the gate are positioned in the trench;
- and
- wherein the source is positioned towards a bottom of the trench and the gate is arranged on top of the source.
A method of making a semiconductor device comprising:
- providing an active area comprising a source and a gate;
- depositing a gate metal contact above and forming an electrical contact with the gate;
- and,
- depositing a source metal contact, bordered by two opposite long sides and two opposite short sides, above and forming an electrical contact with the source and comprising a plurality of metal through contacts positioned adjacent a side of the active area, the plurality of metal through contacts comprising a single metal through contact on each of the two short sides and a plurality of metal through contacts arranged at intervals spaced from one another on each of the two long sides,
- wherein the single metal through contact provided on each of the two short sides comprises a long metal through contact extending along the entire short side.
Dependencies are inferred from the claim text.