Method of forming trench on FinFET and FinFET thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsueh-Wen Tsau, Chia-Ching Lee, Mrunal A. Khaderbad, Da-Yuan Lee
Life of this patent
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Abstract
A method is provided for forming a trench on a FinFET. In an exemplary embodiment, a first inter-layer dielectric layer is formed between a first gate and a second gate of the FinFET in an interposed manner. A second inter-layer dielectric layer is formed above the first inter-layer dielectric layer, the first gate of the FinFET, and the second gate of the FinFET. A photoresist layer is formed above the second inter-layer dielectric layer. And part of the second inter-layer dielectric layer that is not below the photoresist layer is etched.
Claims20
A method of forming a trench on a fin field effect transistor (FinFET), comprising:
- forming a first inter-layer dielectric layer over a first gate and a second gate of the FinFET;
- forming a second inter-layer dielectric layer above the first inter-layer dielectric layer, the first gate of the FinFET, and the second gate of the FinFET;
- patterning a photoresist layer over the second inter-layer dielectric layer;
- etching part of the second inter-layer dielectric layer that is not below the photoresist layer to expose the first gate and the second gate;
- forming a first polysilicon layer over the first gate and the second gate and in the second inter-layer dielectric layer;
- and
- removing the first gate and the second gate and the first polysilicon layer to form a first trench and a second trench through the first inter-layer dielectric layer and the second inter-layer dielectric layer.
A method of forming a trench on a fin field effect transistor (FinFET), comprising:
- depositing a gate oxide layer on a substrate;
- depositing a first polysilicon layer above the gate oxide layer;
- patterning the gate oxide layer and the first polysilicon layer to form a body of the first gate of the FinFET and a body of the second gate of the FinFET;
- forming a first inter-layer dielectric layer over the first gate and the second gate;
- forming a second inter-layer dielectric layer above the first inter-layer dielectric layer, the first gate of the FinFET, and the second gate of the FinFET;
- patterning a photoresist layer over the second inter-layer dielectric layer;
- etching part of the second inter-layer dielectric layer that is not below the photoresist layer to expose the first gate and the second gate;
- forming a second polysilicon layer over the first gate and the second gate and in the second inter-layer dielectric layer;
- and
- removing the first gate and the second gate and the second polysilicon layer to form a first trench and a second trench through the first inter-layer dielectric layer and the second inter-layer dielectric layer.
A method of forming a trench on a fin field effect transistor (FinFET), comprising:
- forming a first inter-layer dielectric layer over a first gate and a second gate of the FinFET;
- forming a second inter-layer dielectric layer above the first inter-layer dielectric layer, the first gate of the FinFET, and the second gate of the FinFET;
- patterning a photoresist layer over the second inter-layer dielectric layer;
- etching part of the second inter-layer dielectric layer that is not below the photoresist layer to expose the first gate and the second gate;
- forming a first polysilicon layer over the first gate and the second gate and in the second inter-layer dielectric layer;
- removing the first gate and the second gate and the first polysilicon layer to form a first trench and a second trench through the first inter-layer dielectric layer and the second inter-layer dielectric layer;
- forming an oxidation film within the first trench and the second trench;
- and
- forming a gate metal layer over the oxidation film.
Dependencies are inferred from the claim text.