Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a first conductive type semiconductor layer comprising a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer;
• V-pits passing through at least one portion of the first upper conductive type semiconductor layer;
• a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pits;
• and
• an active layer interposed between the first and second conductive type semiconductor layers, the V-pits passing through the active layer,
• wherein the first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and comprises a V-pit generation layer comprising starting points of the V-pits,
• wherein the V-pit generation layer includes indium (In), and
• wherein the V-pit generation layer includes an AlInGaN based nitride semiconductor layer and an AlGaN based nitride semiconductor layer that are alternately stacked.

A semiconductor device comprising:

• a first conductive type semiconductor layer comprising a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer;
• V-pits passing through at least one portion of the first upper conductive type semiconductor layer;
• a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pits;
• an active layer interposed between the first and second conductive type semiconductor layers, the V-pits passing through the active layer;
• a low-concentration doping layer interposed between the V-pit generation layer and the active layer;
• and
• a high-concentration barrier layer interposed between the low-concentration doping layer and the active layer and doped with Si,
• wherein the first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and comprises a V-pit generation layer comprising starting points of the V-pits.

A semiconductor device comprising:

• a first conductive type semiconductor layer comprising a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer;
• V-pits passing through at least one portion of the first upper conductive type semiconductor layer;
• a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pits;
• an active layer interposed between the first and second conductive type semiconductor layers, the V-pits passing through the active layer;
• and
• a high-resistance filling layer interposed between the active layer and the second conductive type semiconductor layer and filling the V-pits,
• wherein the first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and comprises a V-pit generation layer comprising starting points of the V-pits.