Method of manufacturing semiconductor device
AssigneeSumitomo Electric Device Innovations, Inc.
InventorTsutomu Komatani
Life of this patent
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Abstract
A semiconductor device includes a semiconductor layer, an insulating film of silicon nitride on the semiconductor layer, source and drain electrodes formed in openings of the insulating film and in contact with the semiconductor layer, and a gate electrode formed in an opening in the insulating film that is located between the source electrode and the drain electrode and formed in contact with the semiconductor layer. The insulating film has an Si content that is uniform in a direction of thickness of the insulating film, an upper region, and a lower region. The upper region can have an oxygen concentration that is greater than that of the lower region. The upper region can be formed by exposing the surface of the insulating film to ozone or an oxygen plasma.
Claims11
A semiconductor device comprising:
- a semiconductor layer;
- an insulating film of silicon nitride on the semiconductor layer, the insulating film having a concentration of oxygen in an upper region thereof that is greater than that in a lower region thereof, and having an Si content that is uniform in a thickness direction thereof;
- source and drain electrodes formed in openings of the insulating film and in contact with the semiconductor layer, and
- a gate electrode formed in an opening in the insulating film that is located between the source electrode and the drain electrode and formed in contact with the semiconductor layer.
A semiconductor device comprising:
- a semiconductor layer;
- an insulating film of silicon nitride on the semiconductor layer, the insulating film having an Si content that is uniform in a thickness direction thereof, and having an upper region and a lower region, the upper region being formed by exposing the surface of the insulating film to ozone or an oxygen plasma;
- source and drain electrodes formed in openings in the insulating film and in contact with the semiconductor layer, and
- a gate electrode formed in an opening in the insulating film that is located between the source electrode and the drain electrode and formed in contact with the semiconductor layer.
Dependencies are inferred from the claim text.