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US 9,287,364 B2Granted
Active regions with compatible dielectric layers
AssigneeIntel Corporation
InventorPushkar Ranade
Life of this patent
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Abstract
A method to form a semiconductor structure with an active region and a compatible dielectric layer is described. In one embodiment, a semiconductor structure has a dielectric layer comprised of an oxide of a first semiconductor material, wherein a second (and compositionally different) semiconductor material is formed between the dielectric layer and the first semiconductor material. In another embodiment, a portion of the second semiconductor material is replaced with a third semiconductor material in order to impart uniaxial strain to the lattice structure of the second semiconductor material.
Claims22
A method of making a semiconductor device comprising:
- forming a substrate comprising a first semiconductor material;
- forming a gate dielectric layer above said substrate, wherein said gate dielectric layer comprises a layer of oxide of said first semiconductor material directly above said substrate;
- forming a gate electrode above said gate dielectric layer;
- and, subsequent to forming said gate electrode,
- removing a portion of said substrate to form a trench between said gate dielectric layer and the remaining portion of said substrate;
- forming an active region in said trench, wherein said active region comprises a second semiconductor material, wherein the composition of said second semiconductor material is different from that of said first semiconductor material, and wherein said active region is formed directly between said dielectric layer and the remaining portion of said substrate;
- forming a pair of tip extensions on either side of said gate electrode and in said active region;
- forming a pair of gate isolation spacers adjacent to the sidewalls of said gate electrode and above said pair of tip extensions;
- and
- forming a pair of source/drain regions on either side of said pair of gate isolation spacers and in said active region;
- subsequent to forming said pair of source/drain regions, forming an inter-layer dielectric layer above said pair of source/drain regions, above said pair of gate isolation spacers and above said gate electrode;
- polishing said inter-layer dielectric layer to expose the top surface of said gate electrode;
- removing said gate electrode to provide a trench between said pair of gate isolation spacers;
- and
- forming a metal layer in said trench to form a metal gate electrode.
12 more elements
A method of making a semiconductor device comprising:
- forming a substrate comprising a first semiconductor material;
- forming a gate dielectric layer above said substrate, wherein said gate dielectric layer comprises a layer of oxide of said first semiconductor material directly above said substrate;
- forming a gate electrode above said gate dielectric layer;
- and, subsequent to forming said gate electrode;
- forming a pair of sacrificial gate isolation spacers adjacent to the sidewalls of said gate electrode;
- subsequent to forming a pair of sacrificial gate isolation spacers, removing a portion of said substrate to form a trench between said gate dielectric layer and the remaining portion of said substrate;
- forming an active region in said trench, wherein said active region comprises a second semiconductor material, wherein the composition of said second semiconductor material is different from that of said first semiconductor material, and wherein said active region is formed directly between said dielectric layer and the remaining portion of said substrate;
- removing said pair of sacrificial gate isolation spacers;
- subsequent to removing said pair of sacrificial gate isolation spacers, forming a pair of tip extensions on either side of said gate electrode and in said active region;
- forming a pair of gate isolation spacers adjacent to the sidewalls of said gate electrode and above said pair of tip extensions;
- and
- forming a pair of source/drain regions on either side of said pair of gate isolation spacers and in said active region.
9 more elements
Dependencies are inferred from the claim text.