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US 9,287,360 B1Granted
III-V nanowire FET with compositionally-graded channel and wide-bandgap core
AssigneeInternational Business Machines Corporation
InventorsAnirban Basu, Guy M. Cohen, Amlan Majumdar, Jeffrey W. Sleight
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Abstract
A method for fabricating a III-V nanowire. The method may include providing a semiconductor substrate, which includes an insulator, with a wide-bandgap layer on the top surface of the semiconductor substrate; etching the insulator to suspend the wide-bandgap layer; growing a compositionally-graded channel shell over the wide-bandgap layer; forming a gate structure forming spacers on the sidewalls of the gate structure; and forming a doped raised source drain region adjacent to the spacers.
Claims11
A semiconductor structure comprising:
- a wide-bandgap layer disposed on a semiconductor substrate;
- a nanowire FET disposed above said semiconductor substrate, wherein said nanowire FET comprises a compositionally-graded channel shell;
- a gate structure, wherein at least a portion of the gate structure is disposed on said nanowire FET;
- spacers formed on sidewalls of the gate structure;
- and
- a doped III-V raised source drain region around said compositionally-graded channel shell, wherein a doped III-V raised source drain is configured to facilitate conductivity in the doped III-V raised source drain region.
3 more elements
Dependencies are inferred from the claim text.