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US 9,287,355 B2Granted
Semiconductor device
AssigneePS4 Luxco S.a.r.l.
InventorKiyonori Oyu
Life of this patent
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Abstract
A semiconductor device comprises a semiconductor substrate; an element-forming region that includes semiconductor elements formed on the semiconductor substrate; a buried electrode plug formed so as to penetrate through the semiconductor substrate; and a trench-type electrode that is buried in a trench within the semiconductor substrate positioned between the element-forming region and the buried electrode plug.
Claims11
A semiconductor device comprising:
- a semiconductor substrate;
- an element-forming region including a semiconductor element and a shallow trench isolation region formed on the semiconductor substrate;
- a buried electrode plug formed so as to penetrate through the semiconductor substrate;
- and
- a trench-type electrode buried in a trench within the semiconductor substrate, having a depth greater than a depth of the shallow trench isolation region but not penetrating through the semiconductor substrate, and positioned between the element-forming region and the buried electrode plug, wherein the trench-type electrode is insulated from the substrate.
2 more elements
Dependencies are inferred from the claim text.