Semiconductor component and method for producing it
AssigneeInfineon Technologies Austria AG
InventorFranz Hirler
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Abstract
A semiconductor component having differently structured cell regions, and a method for producing it. For this purpose, the semiconductor component includes a semiconductor body. A first electrode on the top side of the semiconductor body is electrically connected to a first zone near the surface of the semiconductor body. A second electrode is electrically connected to a second zone of the semiconductor body. Furthermore, the semiconductor body has a drift path region, which is arranged in the semiconductor body between the first electrode and the second electrode. A cell region of the semiconductor component is subdivided into a main cell region and an auxiliary cell region, wherein the breakdown voltage of the auxiliary cells is greater than the breakdown voltage of the main cells.
Claims16
A semiconductor component comprising:
- a semiconductor body having:
- a first electrode electrically connected to a first zone of the semiconductor body;
- a second electrode electrically connected to a second zone of the semiconductor body, the first electrode being arranged on a top side of the semiconductor body and the second electrode being arranged on a rear side of the semiconductor body;
- a drift path region arranged in the semiconductor body between the first electrode and the second electrode;
- a cell region having:
- a main cell region with main cells;
- and
- an auxiliary cell region with at least one auxiliary cell;
- wherein a first trench depth for a field plate in the main cell region is smaller than a second trench depth for a field plate in the auxiliary cell region, wherein the cell region includes a highly doped substrate, and wherein a pedestal region is disposed on the highly doped substrate, only in the main cell region.
Dependencies are inferred from the claim text.