Composite substrate and method for manufacturing same
AssigneeKYOCERA Corporation
InventorsMasanobu Kitada, Tomofumi Honjo
Life of this patent
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Abstract
[Problem] To provide a composite substrate which includes a silicon substrate having few lattice defects. [Solution] A composite substrate (50) that comprises a first substrate (10), which is constituted of a semiconductor material, a second substrate (40), which is constituted of an insulating material, and an oxide layer (30) and a semiconducting epitaxial layer (20) which have been disposed between the substrates (10) and (40) in this order from the second substrate (40) side, the oxide layer (30) having oxygen atoms arranged on the side thereof which faces the epitaxial layer (20).
Claims3
A method for manufacturing a composite substrate, the method comprising:
- preparing a first substrate comprising a semiconductor material and a second substrate comprising an insulating material;
- forming an epitaxial layer having semiconductor characteristics on the first substrate;
- forming an oxide layer on the epitaxial layer by an Atomic Layer Deposition method;
- and
- bonding the second substrate to the oxide layer to obtain a composite substrate.
Dependencies are inferred from the claim text.