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US 9,287,350 B2Granted
Metal-insulator-metal capacitor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChi-Han Yang
Life of this patent
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Abstract
A metal-insulator-metal capacitor includes a bottom metal line and a top metal line disposed above the bottom metal line. An insulating material layer is between the bottom metal line and the top metal line, which the insulating material layer is an inter-metal-dielectric layer.
Claims20
A metal-insulator-metal capacitor comprising:
- a bottom metal line;
- a top metal line;
- and
- an insulating material layer disposed between the bottom metal line and the top metal line, the insulating material layer being an inter-metal-dielectric layer, wherein the top metal line comprises a first portion and a second portion, the first portion being buried in the inter-metal-dielectric layer, and the second portion being on the inter-metal-dielectric layer.
1 more element
A metal-insulator-metal capacitor, comprising:
- a bottom metal line;
- a top metal line comprising a first portion and a second portion;
- an inter-metal-dielectric layer covering the bottom metal line, and a portion of the inter-metal-dielectric layer being between the bottom metal line and the top metal line to act as an insulating material layer, wherein the first portion of the top metal line is buried in the inter-metal-dielectric layer, and the second portion of the top metal line is on the inter-metal-dielectric layer;
- and
- a metal line disposed on the inter-metal-dielectric layer and electrically connected to the bottom metal line.
2 more elements
Dependencies are inferred from the claim text.