Semiconductor memory devices and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHyong-Soo Kim, Byoung-Yong Gwak, Kukhan Yoon
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Abstract
According to example embodiments of inventive concepts, method of forming a semiconductor memory devices includes sequentially forming a first mold layer, a first support layer, a second mold layer, and a second support layer on a substrate, forming lower electrodes penetrating the second support layer, the second mold layer, the first support layer, and the first mold layer on the substrate, patterning the second support layer to form a second support pattern including an opening, removing the second mold layer to expose portions of sidewalls of the lower electrodes, and etching the exposed sidewalls of the lower electrodes.
Claims24
A method of forming a semiconductor memory device, comprising:
- sequentially forming a first mold layer, a first support layer, a second mold layer, and a second support layer on a substrate;
- forming lower electrodes that penetrate the second support layer, the second mold layer, the first support layer, and the first mold layer on the substrate, each of the lower electrodes including a lower portion in the first mold layer and an upper portion in the second mold layer, a width of the upper portion being greater than a width of the lower portion;
- patterning the second support layer to form a second support pattern, the second support pattern including an opening;
- removing the second mold layer to expose sidewalls of the upper portions of the lower electrodes, wherein the exposed sidewalls of the upper portions of the lower electrodes are disposed between the second support pattern and the first support layer vertically spaced apart from each other;
- and
- etching the exposed sidewalls of the upper portions of the lower electrodes to increase a distance between the upper portions of the lower electrodes adjacent to each other, after the removing the second mold layer.
A method of forming a semiconductor memory device, comprising:
- forming a stacked structure on a substrate,
- the stacked structure including a plurality of lower electrodes in a plurality of holes defined by a plurality of mold layers and support layers alternately stacked,
- the plurality of lower electrodes being spaced apart and each including an upper portion between two of the plurality of support layers and a lower portion, a width of the upper portion being greater than a width of the lower portion;
- removing one of the plurality of mold layers to expose sidewalls of the upper portions of the plurality of lower electrodes, wherein the exposed sidewalls of the upper portions of the plurality of lower electrodes are disposed between the two of the plurality of support layers vertically spaced apart from each other;
- and
- etching the exposed sidewalls of the plurality of lower electrodes to increase a distance between the upper portions of the lower electrodes adjacent to each other after the removing one of the plurality of mold layers.
Dependencies are inferred from the claim text.