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US 9,287,348 B1Granted
Devices, systems, and methods for ion trapping
AssigneeHoneywell International Inc.
InventorDaniel Youngner
Life of this patent
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Abstract
Devices, methods, and systems for ion trapping are described herein. One device includes a through-silicon via (TSV) and a trench capacitor formed around the TSV.
Claims18
A device for ion trapping, comprising:
- a through-silicon via (TSV);
- and
- a trench capacitor formed around the TSV and wherein the trench capacitor includes a plurality of annular rings, and wherein each of the plurality of rings is a different distance from the TSV.
A system for ion trapping, comprising:
- a substrate comprising a plurality of devices, each device comprising:
- a through-silicon via (TSV);
- and
- a trench capacitor around the TSV;
- and
- an interposer bonded to the substrate and wherein the trench capacitor includes a plurality of annular rings, and wherein each of the plurality of rings is a different distance from the TSV.
3 more elements
A method of forming a device for ion trapping, comprising:
- forming a through-silicon via (TSV) in a substrate;
- and
- forming a trench capacitor around the TSV in the substrate and wherein forming the TSV in the substrate includes:
- forming a ring-shaped opening in the substrate, the opening defined by a plurality of surfaces of the substrate, wherein the substrate is silicon;
- forming a dielectric material on the plurality of surfaces;
- forming a conductive material on the dielectric material;
- and planarizing a top surface of the substrate and a bottom surface of the substrate.
4 more elements
Dependencies are inferred from the claim text.