Metal-insulator-metal capacitor under redistribution layer
AssigneeQUALCOMM Incorporated
InventorsJohn J. Zhu, P R Chidambaram, Giridhar Nallapati, Choh fei Yeap
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Abstract
A metal-insulator-metal (MIM) capacitor reduces a number of masks and processing steps compared to conventional techniques. A first conductive layer of a MIM capacitor is deposited on a semiconductor chip and patterned using a MIM conductive layer mask. A conductive redistribution layer (RDL) is patterned over the MIM dielectric layer. The conductive redistribution layer includes two RDL nodes that overlap the first conductive layer of the MIM capacitor. A conductive via or bump extends through the MIM dielectric layer and couples one of the RDL nodes to the first conductive layer of the MIM capacitor.
Claims9
A metal-insulator-metal (MIM) capacitor apparatus, comprising:
- a conductive redistribution layer (RDL) including a first conductive redistribution layer node and a second conductive redistribution layer node;
- a MIM capacitor conductive layer overlapping with both the first conductive redistribution layer node and the second conductive redistribution layer node;
- a dielectric layer between the MIM capacitor conductive layer and the first conductive redistribution layer node;
- and
- a conductive inter-layer pathway coupled to the second conductive redistribution layer node and extending through the MIM capacitor conductive layer and through the dielectric layer.
A metal-insulator-metal (MIM) capacitor apparatus, comprising:
- means for providing a dielectric barrier between a MIM capacitor conductive layer and a first conductive redistribution layer (RDL) node overlapping the MIM capacitor conductive layer;
- and
- means for coupling the MIM capacitor conductive layer to a second conductive RDL node overlapping the MIM capacitor conductive layer, the coupling means extending through the MIM capacitor conductive layer and through the dielectric barrier providing means.
Dependencies are inferred from the claim text.