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US 9,287,345 B2Granted
Semiconductor structure with thin film resistor and terminal bond pad
AssigneeGlobalfoundries Inc.
InventorsFen Chen, Jeffrey P. Gambino, Zhong-Xiang He, Tom C. Lee, John C. Malinowski, Anthony K. Stamper
Life of this patent
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Abstract
Disclosed are methods for forming a thin film resistor and terminal bond pad simultaneously. A method includes simultaneously forming a terminal bond pad on a terminal wire and a thin film resistor on two other wires.
Claims19
A semiconductor structure, comprising:
- a last wiring level including a terminal wire, two related wires, and another wire formed in a dielectric material layer;
- at least one of a diffusion barrier layer and an isolation layer formed on the dielectric material layer;
- a terminal bond pad formed on the terminal wire;
- a thin film resistor formed on and conductively linking the two related wires;
- a cap formed on the other wire;
- a passivation layer formed over the terminal bond pad, the thin film resistor, and the cap;
- and
- an opening formed in the passivation layer over the terminal bond pad,
- wherein the terminal bond pad, the thin film resistor, and the cap are composed of portions of a common layer of refractory metal.
6 more elements
A semiconductor structure, comprising:
- an intermediate wiring level comprising a first wire;
- a barrier layer including at least one of a diffusion barrier layer and an isolation oxide layer formed over the intermediate wiring level;
- a cap formed on an upper surface of the first wire;
- a thin film resistor formed on the barrier layer;
- a next wiring level formed over the cap and the thin film resistor;
- a second wire formed in the next wiring level and in electrical contact with the cap;
- third and fourth wires formed in the next wiring level and in electrical contact with the thin film resistor,
- wherein the cap and the thin film resistor are composed of portions of a common layer of refractory metal.
5 more elements
A semiconductor structure, comprising:
- an intermediate wiring level comprising a first wire:
- a barrier layer including at least one of a diffusion barrier layer and an isolation oxide layer formed over the intermediate wiring level;
- a cap formed on an upper surface of the first wire;
- a thin film resistor formed on the barrier layer;
- a next wiring level formed over the cap and the thin film resistor;
- a second wire formed in the next wiring level and in electrical contact with the cap;
- third and fourth wires formed in the next wiring level and in electrical contact with the thin film resistor,
- wherein the cap and the thin film resistor are composed of portions of a common layer of refractory metal, and
- the cap directly contacts the upper surface of the first wire.
6 more elements
A semiconductor structure, comprising:
- a last wiring level including a terminal wire, two related wires. and another wire formed in a dielectric material layer;
- at least one of a diffusion barrier layer and an isolation layer formed on the dielectric material layer;
- a terminal bond pad formed on the terminal wire;
- a thin film resistor formed on and conductively linking the two related wires;
- a cap formed on the other wire;
- a passivation layer formed over the terminal bond pad, the thin film resistor, and the cap;
- and
- an opening formed in the passivation layer over the terminal bond pad,
- wherein the terminal bond pad, the thin film resistor, and the cap are composed of portions of a common layer of refractory metal, and
- the passivation layer is a different material than the at least one of the diffusion barrier layer and the isolation layer.
7 more elements
Dependencies are inferred from the claim text.