Light emitting device and method of manufacturing the same

A light emitting device comprising:

• a thin film transistor over a first substrate;
• an insulating layer over the thin film transistor;
• a first electrode electrically connected to the thin film transistor;
• an insulator over the first electrode, the insulator including an opening which overlaps a first portion of the first electrode, wherein a second portion of the first electrode is covered with the insulator;
• a light emitting layer comprising an organic material overlapping at least the first portion of the first electrode;
• and
• a second electrode over the light emitting layer, wherein the light emitting layer is configured to emit light by a current flowing through the first electrode, the light emitting layer and the second electrode,
• wherein the first electrode has a multi-layer structure comprising a first conductive layer and a second conductive layer over the first conductive layer,
• wherein an inner edge of the insulator is aligned with a side edge of the second conductive layer, and
• wherein the thin film transistor comprises a channel forming region which comprises polycrystalline silicon.

A light emitting device comprising:

• a thin film transistor over a first substrate;
• an insulating layer over the thin film transistor;
• a first electrode electrically connected to the thin film transistor;
• an insulator over the first electrode, the insulator including an opening which overlaps a first portion of the first electrode, wherein a second portion of the first electrode is covered with the insulator;
• a light emitting layer comprising an organic material overlapping at least the first portion of the first electrode;
• and
• a second electrode over the light emitting layer, wherein the light emitting layer is configured to emit light by a current flowing through the first electrode, the light emitting layer and the second electrode,
• wherein the first electrode has a multi-layer structure comprising a first conductive layer and a second conductive layer over the first conductive layer,
• wherein the insulator covers the second conductive layer,
• wherein the second conductive layer includes a tapered side surface so as to reflect light emitted by the light emitting layer toward the opening of the insulator, and
• wherein the thin film transistor comprises a channel forming region which comprises polycrystalline silicon.