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US 9,287,325 B2Granted
Vertical type semiconductor device, fabrication method thereof and operation method thereof
AssigneeSK hynix Inc.
InventorKang Sik Choi
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Abstract
A vertical type semiconductor device and a fabrication method thereof are provided. The vertical type semiconductor device includes a pillar structure having a stacking structure of a conductive layer and a data storage material and formed on a common source region, and a gate electrode formed to surround the data storage material of the pillar structure.
Claims10
A vertical type semiconductor device, comprising:
- a pillar structure having a stacking structure of a conductive layer and a data storage material and formed over a common source region;
- and
- a gate electrode formed to surround the data storage material of the pillar structure,
- wherein the data conductive layer and the data storage material are sequentially stacked.
1 more element
Dependencies are inferred from the claim text.