Non-volatile memory with resistive element and manufacturing method thereof
AssigneeGlyphtron Corp.
InventorChrong-Jung Lin
Life of this patent
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Abstract
A non-volatile memory includes a substrate, a fin structure, a gate structure, a transition layer, and a metal layer. The fin structure is protruded from the substrate. A first source/drain region and a second source/drain region are formed in the fin structure. The gate structure covers a top surface and two lateral surfaces of a part of the fin structure. The gate structure is arranged between the first source/drain region and the second source/drain region. The transition layer is in contact with the second source/drain region. The metal layer is in contact with the transition layer. By setting or resetting the transition layer, a resistance value of the transition layer is correspondingly changed.
Claims21
A non-volatile memory, comprising:
- a substrate;
- a fin structure protruded from the substrate, wherein a first source/drain region and a second source/drain region are formed in the fin structure;
- a gate structure covering a top surface and two lateral surfaces of a part of the fin structure, wherein the gate structure is arranged between the first source/drain region and the second source/drain region;
- a transition layer in contact with the second source/drain region;
- and
- a metal layer in contact with the transition layer,
- wherein, an insulation layer is formed on a first part of the second source/drain region;
- a second part of the second source/drain region is exposed through a via in the insulation layer;
- a dielectric layer is formed on an inner wall and a bottom of the via;
- a barrier layer is formed on the dielectric layer;
- the metal layer is filled in the via;
- the dielectric layer and the barrier layer are reacted with each other to form the transition layer;
- and the transition layer is in contact with the second source/drain region and the metal layer;
- and
- wherein by setting or resetting the transition layer, a resistance value of the transition layer is correspondingly changed.
A method for manufacturing a non-volatile memory, the method comprising steps of:
- (a) etching a substrate, so that a fin structure is protruded from the substrate;
- (b) forming a gate structure, wherein a top surface and two lateral surfaces of a part of the fin structure are covered by a gate structure, so that the fin structure is divided into a first zone and a second zone by the gate structure;
- (c) performing an ion implantation process, so that a first source/drain region is formed in the first zone and a second source/drain region is formed in the second zone;
- (d) forming an insulation layer over the second source/drain region;
- (e) etching the insulation layer to form a via in the insulation layer, wherein a bottom of the via is in contact with a surface of the second source/drain region;
- (f) forming a dielectric layer on an inner wall and the bottom of the via;
- (g) forming a barrier layer on the dielectric layer;
- (h) filling a metal layer into the via;
- and
- (i) allowing the dielectric layer and the barrier layer to be reacted with each other to form a transition layer,
- wherein by setting or resetting the transition layer, a resistance value of the transition layer is correspondingly changed.
A method for manufacturing a non-volatile memory, the method comprising steps of:
- (a) etching a substrate, so that a fin structure is protruded from the substrate;
- (b) forming a gate structure, wherein a top surface and two lateral surfaces of a part of the fin structure are covered by a gate structure, so that the fin structure is divided into a first zone and a second zone by the gate structure;
- (c) performing an ion implantation process, so that a first source/drain region is formed in the first zone and a second source/drain region is formed in the second zone;
- (d) sequentially forming a dielectric layer and an insulation layer over the second source/drain region;
- (e) etching the insulation layer and the dielectric layer to form a via in the insulation layer and the dielectric layer, wherein a part of the dielectric layer is arranged between a bottom of the via and the second source/drain region;
- (f) forming a barrier layer on an inner wall and the bottom of the via;
- (g) filling a metal layer into the via;
- and
- (h) allowing the dielectric layer and the barrier layer to be reacted with each other to form a transition layer,
- wherein by setting or resetting the transition layer, a resistance value of the transition layer is correspondingly changed.
Dependencies are inferred from the claim text.