Magnetic tunnel junction device having amorphous buffer layers that are magnetically connected together and that have perpendicular magnetic anisotropy

Abstract

According to a first embodiment of the present invention, a magnetic tunnel junction device comprises: a free layer having a magnetization in a variable direction; a pinned layer having a magnetization in a pinned direction; and a tunnel insulation film formed between the free layer and the pinned layer, wherein the pinned layer includes a ferromagnetic film and an amorphous metal film. In addition, a magnetic device according to a second embodiment of the present invention comprises: an amorphous or nanocrystal material layer; and a perpendicular magnetic anisotropic material layer formed on the amorphous or nanocrystal material layer. The amorphous or nanocrystal material layer is a predefined amorphous material or nanocrystal material layer serving as a lower layer, and the perpendicular magnetic anisotropic material layer is formed on the amorphous or nanocrystal material layer.

Dependencies are inferred from the claim text.