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US 9,287,320 B2Granted
Semiconductor device and operating method thereof
AssigneeSK hynix Inc.
InventorSung-Kun Park
Life of this patent
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Abstract
A substrate including a plurality of transistors, and a piezoelectric formed to be contacted with the substrate. The piezoelectric is formed heat-expendably in a direction parallel to a gate direction of the transistors.
Claims19
A semiconductor device comprising:
- a substrate comprising a plurality of transistors;
- and
- a piezoelectric formed to be contacted with the substrate,
- wherein the piezoelectric is formed expendably in a direction parallel to a gate direction of the transistors,
- wherein the substrate comprises a semiconductor chip which a packaging process is completed,
- wherein the piezoelectric has a larger size than the substrate.
3 more elements
A semiconductor device comprising:
- a substrate comprising a plurality of NMOS transistors and a plurality of PMOS transistors which a packaging process is completed;
- and
- a piezoelectric formed to be contacted with the substrate,
- wherein the piezoelectric is formed expendably in at least a direction parallel to a gate direction of the PMOS transistors,
- wherein the piezoelectric has a larger size than the substrate.
2 more elements
An operating method executable in a semiconductor device and suitable for operating a semiconductor device having a device, a control unit, a comparison unit, and a piezoelectric, comprising:
- receiving an external command to the control unit;
- supplying, by the control unit, a voltage to the piezoelectric;
- supplying, by the piezoelectric, a stress to the semiconductor device;
- determining performance of the semiconductor device;
- and
- transmitting a signal representing the determination result to the control unit.
3 more elements
Dependencies are inferred from the claim text.