Solid-state imaging sensor, method of manufacturing the same, and camera
AssigneeCanon Kabushiki Kaisha
InventorYasuhiro Sekine
Life of this patent
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Abstract
A solid-state imaging sensor which has a first face and a second face, and includes an image sensing region and an electrode region, comprising a first portion including an insulating member and a wiring pattern, a second portion including a plurality of photoelectric conversion portions in the image sensing region, and a third portion including a plurality of microlenses in the image sensing region, wherein an opening is formed on the side of the first face in the electrode region so as to expose the wiring pattern, and the sensor includes a first film covering the plurality of microlenses, and a second film covering a side face of the opening and exposing part of the wiring pattern in the electrode region, with covering the first film in the image sensing region.
Claims12
A solid-state imaging sensor which has a first face and a second face on an opposite side of the first face, and includes an image sensing region in which a plurality of photoelectric conversion portions are arrayed and an electrode region, comprising:
- in a direction from the second face to the first face,
- a first portion including an insulating member and a wiring pattern provided in the insulating member;
- a second portion including the plurality of photoelectric conversion portions in the image sensing region;
- and
- a third portion including a plurality of microlenses corresponding to the plurality of photoelectric conversion portions in the image sensing region,
- wherein an opening is formed on the side of the first face in the electrode region so that the wiring pattern is exposed, and
- the solid-state imaging sensor includes
- a first film provided to cover the plurality of microlenses in the image sensing region and to not cover a side face of the opening, and
- a second film provided to cover the side face of the opening and expose at least part of the wiring pattern in the electrode region while covering the first film in the image sensing region.
A method of manufacturing a solid-state imaging sensor which has a first face and a second face on an opposite side of the first face, and includes an image sensing region in which a plurality of photoelectric conversion portions are arrayed and an electrode region,
- the solid-state imaging sensor including, from a side of the second face toward a side of the first face, a first portion including an insulating member and a wiring pattern provided in the insulating member, a second portion including the plurality of photoelectric conversion portions in the image sensing region, and a third portion including a plurality of microlenses corresponding to the plurality of photoelectric conversion portions in the image sensing region,
- the method comprising:
- forming a first film to cover the plurality of microlenses in the image sensing region;
- forming an opening on the side of the first face in the electrode region so that the wiring pattern is exposed, with removing part of the first film;
- and
- forming a second film to cover a side face of the opening and expose at least part of the wiring pattern in the electrode region while covering another part of the first film which remains in the image sensing region.
Dependencies are inferred from the claim text.