US 9,287,303 B1 · CMOS image sensor structure

Abstract

A semiconductor device includes a substrate, a logic gate structure, a photosensitive gate structure, a hard mask layer, a first spacer, a first source, a first drain, a second spacer, a second source and a second drain. The logic gate structure and the photosensitive gate structure are disposed on a surface of the substrate. The hard mask layer covers the logic gate structure, the photosensitive gate structure and the surface of the substrate. The first spacer overlies the hard mask layer conformal to a sidewall of the logic gate structure. The first source and drain are respectively disposed in the substrate at two opposite sides of the logic gate structure. The second spacer overlies the hard mask layer conformal to a sidewall of the photosensitive gate structure. The second source and drain are respectively disposed in the substrate at two opposite sides of the photosensitive gate structure.

Claims20

Dependent claims

A method for manufacturing a semiconductor device, the method comprising:

providing a substrate;
forming a logic gate structure and a photosensitive gate structure on a surface of the substrate;
forming a hard mask layer to cover the logic gate structure, the photosensitive gate structure and the surface of the substrate;
forming a spacer material layer to cover the hard mask layer;
removing a first portion of the spacer material layer to expose a portion of the hard mask layer, wherein a second portion of the spacer material layer remains for forming a first spacer overlying the hard mask layer conformal to a sidewall of the logic gate structure and a second spacer overlying the hard mask layer conformal to a sidewall of the photosensitive gate structure;
and
forming a first source and a first drain respectively in the substrate at two opposite sides of the logic gate structure, and a second source and a second drain respectively in the substrate at two opposite sides of the photosensitive gate structure.

4 more elements

Dependencies are inferred from the claim text.

CMOS image sensor structure

Life of this patent

CMOS image sensor structure

Life of this patent

Abstract

Claims20