Thin film transistor array panel and method of manufacturing the panel
AssigneeSamsung Display Co., Ltd.
InventorsSho Yeon Kim, Hyun Kim, Eun Hye Park, Byung Hwan Chu, Seung-Ha Choi
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AssigneeSamsung Display Co., Ltd.
InventorsSho Yeon Kim, Hyun Kim, Eun Hye Park, Byung Hwan Chu, Seung-Ha Choi
Estimating the term…
A thin film transistor array panel includes: a gate line disposed on a substrate and including a first connection member of a gate driver region and a gate electrode of a display area, a gate insulating layer disposed on the substrate and having a first contact hole exposing the first connection member, a semiconductor layer disposed on a region of the gate insulating layer, a data line disposed on the gate insulating layer and the semiconductor layer and including a drain electrode, a source electrode, and a second connection member connected to the first connection member through the first contact hole, a passivation layer disposed on the data line, the source electrode, the drain electrode, and the second connection member, and a pixel electrode disposed on the passivation layer and electrically connected to the drain electrode. A horizontal width of the first contact hole ranges from 1 to 2 μm.
A manufacturing method of a thin film transistor array panel, the method comprising:
Dependencies are inferred from the claim text.