US 9,287,294 B2 · Capacitor and semiconductor device having oxide semiconductor

Abstract

An object is to provide a novel semiconductor device which can store data even when power is not supplied in a data storing time and which does not have a limitation on the number of writing operations. The semiconductor device includes a transistor and a capacitor. The transistor includes a first oxide semiconductor layer, a source electrode and a drain electrode which are in contact with the first oxide semiconductor layer, a gate electrode overlapping with the first oxide semiconductor layer, and a gate insulating layer between the first oxide semiconductor layer and the gate electrode. The capacitor includes the source electrode or the drain electrode, a second oxide semiconductor layer in contact with the source electrode or the drain electrode, and a capacitor electrode in contact with the second oxide semiconductor layer.

Claims29

Dependent claims

A semiconductor device comprising:

an oxide semiconductor layer, the oxide semiconductor layer comprising a first portion and a second portion;
a transistor comprising a gate electrode, a source electrode, a drain electrode, a gate insulating layer, and the first portion of the oxide semiconductor layer;
and
a capacitor comprising a first electrode, a second electrode overlapping the first electrode, and the second portion of the oxide semiconductor layer between the first electrode and the second electrode, as a dielectric of the capacitor,
wherein a minimal distance between the first electrode and the second electrode in the capacitor is smaller than a minimal distance between the gate electrode and the source electrode in the transistor by a thickness of the gate insulating layer.

2 more elements

A semiconductor device comprising:

a first conductive layer, the first conductive layer comprising a first portion and a second portion;
a second conductive layer, the second conductive layer comprising a first portion and a second portion;
an oxide semiconductor layer, the oxide semiconductor layer comprising a first portion and a second portion;
a transistor comprising:
the first portion of the first conductive layer as a gate electrode;
a gate insulating layer over the gate electrode;
the first portion of the oxide semiconductor layer over the gate insulating layer and the gate electrode;
and
the first portion and the second portion of the second conductive layer as, respectively, a source electrode and a drain electrode, each in electrical contact with the first portion of the oxide semiconductor layer;
and
a capacitor comprising:
the second portion of the first conductive layer as a first electrode;
one of the first portion and the second portion of the second conductive layer as a second electrode;
and
the second portion of the oxide semiconductor layer between the first electrode and the second electrode,
wherein a minimal distance between the first electrode and the second electrode in the capacitor is smaller than a minimal distance between the gate electrode and the source electrode in the transistor by a thickness of the gate insulating layer.

13 more elements

Dependencies are inferred from the claim text.

Capacitor and semiconductor device having oxide semiconductor

Life of this patent

Capacitor and semiconductor device having oxide semiconductor

Life of this patent

Abstract

Claims29