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US 9,287,289 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsKi Hong Lee, Seung Ho Pyi, Il Young Kwon
Life of this patent
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Abstract
A semiconductor device includes a substrate, and a gate line, located over the substrate, which includes a first conductive layer and one or more second conductive pattern layers located in the first conductive layer. The second conductive pattern layer comprises a metal layer to thus reduce resistance of a gate line.
Claims8
A method of manufacturing a semiconductor device, comprising:
- forming a gate insulating layer on a substrate;
- forming a gate line over the gate insulating layer, wherein the gate line includes a first conductive layer and one or more second conductive pattern layers which are formed in the first conductive layer;
- and
- forming a third conductive layer over the first conductive layer in which the second conductive pattern layer is formed,
- wherein the first conductive layer and the third conductive layer include the same type of impurities or different types of impurities.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a gate insulating layer on a substrate;
- and
- forming a gate line over the gate insulating layer, wherein the gate line includes a first conductive layer and one or more second conductive pattern layers which are formed in the first conductive layer,
- wherein the forming of the gate line comprises:
- forming a first trench by etching the first conductive layer;
- forming a barrier layer in the first trench, wherein a central region of the first trench is opened;
- forming a second conductive layer to fill the opened central region of the first trench;
- forming the second conductive pattern layer and a barrier pattern layer to filled in the first trench by performing a planarization process on the second conductive layer and the barrier layer until a surface of the first conductive layer is exposed;
- and
- forming the gate line including the second conductive pattern layer and the barrier pattern layer by etching the first conductive layer.
7 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a gate insulating layer on a substrate;
- and
- forming a gate line over the gate insulating layer, wherein the gate line includes a first conductive layer and one or more second conductive pattern layers which are formed in the first conductive layer,
- wherein the forming of the gate line comprises:
- forming a first trench and a second trench by etching the first conductive layer;
- forming the second conductive pattern layer to fill each of the first trench and the second trench;
- and
- forming a pipe gate including the second trench and the gate line including the first trench by etching the first conductive layer.
5 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a gate insulating layer on a substrate;
- and
- forming a gate line over the gate insulating layer, wherein the gate line includes a first conductive layer and one or more second conductive pattern layers which are formed in the first conductive layer,
- wherein the forming of the gate line comprises:
- forming a first trench and a second trench by etching the first conductive layer;
- forming a barrier layer along an entire surface of the first conductive layer, wherein the second trench is filled with the barrier layer and a central region of the first trench is opened;
- forming a second conductive layer on the barrier layer to fill the opened central region of the first trench;
- forming the second conductive pattern layer and a barrier pattern layer filled in the first trench and a barrier pattern layer filled in the second trench by performing a planarization process on the second conductive layer and the barrier layer until a surface of the first conductive layer is exposed;
- and
- forming the pipe gate including the second trench and the gate line including the first trench by etching the first conductive layer.
7 more elements
Dependencies are inferred from the claim text.