Semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorsNaoki Yasuda, Yoshiaki Fukuzumi
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Abstract
According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode layers and a plurality of insulating layers each provided between adjacent ones of the electrode layers; and a columnar portion penetrating through the stacked body and extending in a stacking direction of the stacked body. The columnar portion includes a channel body extending in the stacking direction; a charge storage film provided between the channel body and the electrode layer; and a gap provided between the charge storage film and the electrode layer.
Claims20
A semiconductor memory device comprising:
- a substrate;
- a stacked body provided above the substrate, the stacked body being including a plurality of electrode layers and a plurality of insulating layers each provided between adjacent ones of the electrode layers;
- and
- a columnar portion penetrating through the stacked body and extending in a stacking direction of the stacked body,
- the columnar portion including:
- a channel body extending in the stacking direction;
- a charge storage film provided between the channel body and the electrode layer;
- and
- a gap provided between the charge storage film and the electrode layer and
- a first insulating film provided between the charge storage film and the electrode layer;
- the insulating film overlapping a part of the electrode layer and a part of the gap when viewed along a first direction parallel to a surface of the substrate.
A semiconductor memory device comprising:
- a stacked body including a plurality of electrode layers alternately stacked with a plurality of insulating layers, the stacked body including a first electrode layer, a first insulating layer, a second electrode layer and a second insulating layer, the second electrode layer being provided on the first insulating layer, the first insulating layer being provided on the first electrode layer, and the first electrode layer being provided on the second insulating layer;
- a columnar portion penetrating through the stacked body and extending in a stacking direction of the stacked body,
- the columnar portion including:
- a channel body extending in the stacking direction;
- a charge storage film provided between the channel body and the electrode layer;
- a gap extending in the stacking direction, the gap being provided between the charge storage film and the electrode layer, the gap being provided along the first insulating layer, first electrode layer, second insulating layer and second electrode layer.
Dependencies are inferred from the claim text.