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US 9,287,278 B2Granted
Non-volatile push-pull non-volatile memory cell having reduced operation disturb and process for manufacturing same
AssigneeMicrosemi SoC Corporation
InventorsFethi Dhaoui, John McCollum
Life of this patent
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Abstract
A non-volatile memory cell includes a p-channel non-volatile transistor having a source and a drain defining a channel and a gate overlying the channel and an n-channel non-volatile transistor having a source and a drain defining a channel and a gate overlying the channel. In at least one of the p-channel non-volatile transistor and the n-channel non-volatile transistor, a lightly-doped drain region extends from the drain into the channel.
Claims8
A non-volatile memory cell, comprising:
- a p-channel non-volatile transistor having a source and a drain defining a channel and a gate overlying the channel;
- an n-channel non-volatile transistor having a source and a drain defining a channel and a gate overlying the channel, the drain of the p-channel non-volatile transistor connected to the drain of the n-channel non-volatile transistor;
- and
- in at least one of the p-channel non-volatile transistor and the n-channel non-volatile transistor, a lightly-doped drain region extending from the drain towards the channel, and a lightly-doped drain region extending from the source towards the channel, the lightly-doped drain region extending from the source having a higher doping level than the lightly-doped drain region extending from the drain.
1 more element
A non-volatile memory cell, comprising:
- a p-channel non-volatile transistor having a source and a drain defining a channel, a gate overlying the channel, a lightly-doped drain region extending from the drain towards the channel, and a lightly-doped drain region extending from the source towards the channel;
- an n-channel non-volatile transistor having a source and a drain defining a channel and a gate overlying the channel;
- and
- wherein the lightly-doped drain region extending from the source of the p-channel non-volatile transistor has a higher doping level than the lightly-doped drain region extending from the drain of the p-channel non-volatile transistor.
1 more element
A non-volatile memory cell, comprising:
- a p-channel non-volatile transistor having a source and a drain defining a channel, a gate overlying the channel, a lightly-doped drain region extending from the drain towards the channel, and a lightly-doped drain region extending from the source towards the channel;
- an n-channel non-volatile transistor having a source and a drain defining a channel, a gate overlying the channel, a lightly-doped drain region extending from the drain towards the channel, and a lightly-doped drain region extending from the source towards the channel;
- wherein the lightly-doped drain region extending from the source of the p-channel non-volatile transistor has a higher doping level than the lightly-doped drain region extending from the drain of the p-channel non-volatile transistor;
- and
- wherein the lightly-doped drain region extending from the source of the n-channel non-volatile transistor has a higher doping level than the lightly-doped drain region extending from the drain of the n-channel non-volatile transistor.
2 more elements
Dependencies are inferred from the claim text.