Antifuse of semiconductor device and method of fabricating the same
AssigneeSK hynix Inc.
InventorYeong Eui Hong
Life of this patent
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Abstract
An antifuse of a semiconductor device and a method of fabricating the same capable of causing an antifuse to stably operate by rupturing the antifuse at a specific point and stabilizing a current level when rupturing the antifuse are provided. The antifuse may include: a device isolation layer defining a first active region in a semiconductor substrate; a first and second junction regions provided in the first active region; a second active region formed over the first junction region; a gate insulating layer formed over the first active region and the second active region; and a gate electrode formed over the gate insulating layer.
Claims11
A method of fabricating an antifuse of a semiconductor memory device, the method comprising:
- forming a second active region over a first active region in a semiconductor substrate;
- forming a gate insulating layer over the second active region and the first active region, the gate insulating layer having a stepped portion proximate a sidewall of the second active region;
- forming a gate electrode over the gate insulating layer and the first active region;
- etching the gate insulating layer and the gate electrode to form a gate pattern;
- and
- forming a first junction region in the first active region to overlap the second active region.
Dependencies are inferred from the claim text.