1t sram/dram

A method for forming a device comprising:

• providing a substrate having top and bottom surfaces, wherein the substrate comprises a first semiconductor material;
• forming an isolation well below the top substrate surface, wherein an area of the substrate between the isolation well and the top substrate surface serves as a body region of a transistor, and the isolation well isolates the body region from the substrate;
• forming a floating body having a second semiconductor material different than the first semiconductor material over the isolation well and within the body region, wherein the second semiconductor material is a band engineered (BE) material such that the floating body is a BE floating body;
• and
• forming a transistor over the substrate, wherein forming the transistor comprises
• forming a gate on the top substrate surface, and
• forming first and second diffusion regions in the body region adjacent to first and second sides of the gate.