Epitaxially grown silicon germanium channel FinFET with silicon underlayer

A method for epitaxially growing a FinFET, the method comprising:

• providing a semiconductor substrate, wherein the semiconductor substrate includes at least an insulator and an underlayer;
• forming a channel layer on the semiconductor substrate using epitaxial growth;
• etching a recess into the channel layer;
• regrowing a portion of the channel layer using epitaxial growth;
• etching one or more recesses into the channel layer and the underlayer to form a plurality of fins;
• forming a gate structure and a set of spacers, wherein the set of spacers are formed on sidewalls of the gate structure;
• etching a source drain region into the channel layer;
• and
• forming a source drain material in the source drain region using epitaxial growth.