ESD protection device and related fabrication methods
AssigneeFreescale Semiconductor, Inc.
InventorsRouying Zhan, Chai Ean Gill
Life of this patent
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Abstract
ESD protection device structures and related fabrication methods are provided. An exemplary semiconductor protection device includes a first base well region having a first conductivity type, a collector region of the opposite conductivity type, and a second base well region having a dopant concentration greater than the first base well region, and a portion of the second base well region is disposed between the first base well region and the collector region. A third base well region with a different dopant concentration is disposed between the collector region and the second base well region. At least a portion of the first base well region is disposed between a base contact region and an emitter region within the second base well region.
Claims20
A semiconductor device having a protection circuit, the protection circuit comprising:
- a first region of semiconductor material having a first conductivity type and a first dopant concentration;
- a second region of semiconductor material having a second conductivity type opposite the first conductivity type;
- a third region of semiconductor material having the first conductivity type and a second dopant concentration that is greater than the first dopant concentration, wherein at least a portion of the third region is disposed between the first region and the second region;
- a fourth region of semiconductor material having the first conductivity type and a third dopant concentration that is different from the second dopant concentration and different from the first dopant concentration, wherein at least a portion of the fourth region is disposed between the second region and the third region;
- a fifth region of semiconductor material having the first conductivity type;
- and
- a sixth region of semiconductor material within the third region, the sixth region having the second conductivity type, wherein at least a portion of the first region is disposed between the fifth region and the sixth region.
A protection device structure comprising:
- a first base well region of semiconductor material having a first conductivity type and a first dopant concentration;
- a second base well region of semiconductor material having the first conductivity type and a second dopant concentration that is less than the first dopant concentration, the second base well region abutting the first base well region;
- a base contact region of semiconductor material having the first conductivity type and a third dopant concentration that is greater than the second dopant concentration, wherein at least a portion of the second base well region resides between the base contact region and the first base well region;
- a third base well region of semiconductor material having the first conductivity type and a fourth dopant concentration that is greater than the second dopant concentration and different than the first dopant concentration, the third base well region abutting the first base well region;
- an emitter region of semiconductor material within the first base well region, the emitter region having a second conductivity type opposite the first conductivity type, wherein the emitter region and the base contact region are electrically connected;
- and
- a collector region of semiconductor material having the second conductivity type, wherein at least a portion of the third base well region resides between the emitter region and the collector region.
Dependencies are inferred from the claim text.