Semiconductor device with redistribution layers on partial encapsulation and non-photosensitive passivation layers

A semiconductor device, the device comprising:

• a semiconductor die having a first surface, a second surface opposite to the first surface, and side surfaces between the first and second surfaces;
• an encapsulant encapsulating the side surfaces of the semiconductor die;
• a non-photosensitive protection layer covering a portion of the first surface of the semiconductor die and a first surface of the first encapsulant;
• a contact pad on the first surface of the semiconductor die;
• a redistribution layer on the non-photosensitive protection layer and the contact pad, the redistribution layer comprising a linear portion and a circular contact pad;
• and
• a hemispherical conductive bump on the circular pad comprising a protruding part extending toward the linear portion, wherein the protruding part has a radius less than the hemispherical conductive bump.

A semiconductor device, the device comprising:

• a semiconductor die having a first surface, a second surface opposite to the first surface, and side surfaces between the first and second surfaces;
• an encapsulant encapsulating the side surfaces of the semiconductor die;
• a non-photosensitive protection layer covering a portion of the first surface of the semiconductor die and a first surface of the encapsulant;
• and
• a redistribution layer on the non-photosensitive protection layer and electrically coupled to the semiconductor die, wherein:
• the redistribution layer comprises a linear portion;
• and
• a circular pad and a hemispherical conductive bump on the circular pad comprises a protruding part extending toward the linear portion and having a radius less than the hemispherical conductive bump.