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US 9,287,228 B2Granted
Method for etching semiconductor structures and etching composition for use in such a method
AssigneeLam Research Corporation
InventorsHarald Kraus, Hebert Schier
Life of this patent
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Abstract
A method of etching a semiconductor structure, comprises contacting an under bump metallization (UBM) with an etching composition. The UBM includes an underlying layer comprising titanium and an overlying layer comprising a second metal. The etching composition is a liquid comprising at least 0.1 wt % hydrofluoric acid and at least 0.1 wt % phosphoric acid.
Claims14
A method of etching a semiconductor structure, comprising:
- contacting an under bump metallization (UBM) with an etching composition;
- wherein the UBM includes an underlying layer comprising titanium and an overlying layer comprising a second metal;
- and
- wherein the etching composition is a liquid comprising at least 0.1 wt % hydrofluoric acid and at least 0.1 wt % phosphoric acid.
1 more element
Dependencies are inferred from the claim text.