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US 9,287,222 B1Granted
Integrated semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsShih-Wei Li, Yun-Han Chu, Guo-Chih Wei
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Abstract
An integrated semiconductor device and method for fabricating the same are provided wherein the integrated semiconductor device comprises a substrate a first stress-inducing layer, a second stress-inducing layer and an integrated circuit layer. The first stress-inducing layer covers on the substrate. The second stress-inducing layer partially covers on the first stress-inducing layer. The integrated circuit layer is bonded over the substrate.
Claims12
A method for fabricating an integrated semiconductor device, comprising steps as follows:
- providing a first substrate;
- forming a first stress-inducing layer encapsulating the first substrate;
- forming a second stress-inducing layer covering on the first stress-inducing layer;
- removing a portion of the second stress-inducing layer in order to bend the first substrate into a bow-shape, wherein the step for removing a portion of the second stress-inducing layer comprises performing an etching process to remove a portion of the second stress-inducing layer that covers on the top surface of the substrate and retaining a portion of the second stress-inducing layer that covers on a bottom surface and sidewalls of the substrate;
- and
- bonding an integrated circuit layer onto a portion of the first substrate that is not covered by the second stress-inducing layer.
3 more elements
Dependencies are inferred from the claim text.