Integrated circuits with improved contact structures
AssigneeGlobalfoundries Inc.
InventorsXunyuan Zhang, Xuan Lin, Vimal Kamineni
Life of this patent
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Abstract
Integrated circuits with improved contact structures are provided. In an exemplary embodiment, an integrated circuit includes a semiconductor substrate disposed with a device therein and/or thereon. The integrated circuit includes a contact structure in electrical contact with the device. The contact structure includes a plug metal and a barrier layer, and the barrier layer is selected from fluorine-free tungsten (FFW), tungsten carbide, and tungsten nitride. The integrated circuit further includes a dielectric material overlying the semiconductor substrate. Also, the integrated circuit includes an interconnect formed within the dielectric material and in electrical contact with the contact structure.
Claims20
An integrated circuit comprising:
- a semiconductor substrate disposed with a device therein and/or thereon;
- a contact structure in electrical contact with the device, wherein the contact structure includes a plug metal and a barrier layer, wherein the barrier layer is selected from fluorine-free tungsten (FFW), tungsten carbide, and tungsten nitride, and wherein the contact structure has an upper surface;
- a dielectric material overlying the semiconductor substrate;
- and
- an interconnect formed within the dielectric material and in electrical contact with the contact structure, wherein the interconnect is directly on the upper surface of the contact structure.
An integrated circuit comprising:
- a semiconductor substrate disposed with a device therein and/or thereon;
- a contact structure in electrical contact with the device, wherein the contact structure includes a plug metal and a barrier layer;
- a contact cap formed on and encapsulating the plug metal and the barrier layer of the contact structure, wherein the contact cap has an upper surface extending from a first cap edge to a second cap edge;
- a dielectric material overlying the semiconductor substrate;
- and
- an interconnect formed within the dielectric material and in electrical contact with the contact structure through the contact cap, wherein the interconnect has a bottom surface extending from a first interconnect edge to a second interconnect edge, wherein the first interconnect edge is aligned with the first cap edge, and wherein the second interconnect edge is aligned with the second cap edge.
Dependencies are inferred from the claim text.