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US 9,287,212 B2Granted
Semiconductor device interconnection structure having dielectric-filled notches
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Yuan Ting, Chung-Wen Wu
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Abstract
A semiconductor device is disclosed. The device includes a substrate, a first dielectric layer disposed over the substrate and a metal structure disposed in the first dielectric layer and below a surface of the first dielectric layer. The metal structure has a such shape that having an upper portion with a first width and a lower portion with a second width. The second width is substantially larger than the first width. The semiconductor device also includes a sub-structure of a second dielectric positioned between the upper portion of the metal structure and the first dielectric layer.
Claims20
A semiconductor device comprising:
- a substrate;
- a first dielectric layer disposed over the substrate;
- a metal structure disposed in the first dielectric layer, the metal structure having a shape that includes:
- an upper portion disposed in the first dielectric layer and having a first width, the upper portion having a top surface facing away from the substrate;
- and
- a lower portion disposed in the first dielectric layer and having a second width that is larger than the first width;
- a dielectric sub-structure positioned along the upper portion and the lower portion of the metal structure, the dielectric sub-structure having a top surface facing away from the substrate, wherein the top surface of the dielectric sub-structure is substantially coplanar with the top surface of the upper portion;
- and
- a conductive feature disposed over the metal structure and the dielectric sub-structure such that the conductive feature physically contacts the entire top surface of the upper portion and the entire top surface of the dielectric sub-structure.
6 more elements
A device comprising:
- a first dielectric layer disposed over a semiconductor substrate;
- a metal structure disposed in the first dielectric layer, wherein the metal structure includes a first portion having a first width and a second portion having a second width that is different than the first width, wherein the first and second portions are disposed in the first dielectric layer, wherein the metal structure has a top surface facing away from the semiconductor substrate:
- a second dielectric layer disposed along the first and second portions of the metal structure, wherein the second dielectric layer has a top surface facing away from the semiconductor substrate such that the top surface of the second dielectric layer is substantially coplanar with the top surface of the metal structure;
- and
- a conductive feature disposed over the metal structure and the second dielectric layer such that the conductive feature physically contacts the entire top surface of the metal structure and the entire top surface of the second dielectric layer.
2 more elements
A device comprising:
- a first dielectric layer disposed over a semiconductor substrate;
- a first conductive feature disposed in the first dielectric layer, wherein the first conductive feature includes a first portion having a first height and a second portion having a second height that is different than the first height, wherein the first and second portions are disposed in the first dielectric layer, wherein the first portion has a top surface facing away from the semiconductor substrate;
- a second dielectric layer disposed along a sidewall of the first portion and a top surface of the second portion, wherein the second dielectric layer has a top surface facing away from the semiconductor substrate such that the top surface of the second dielectric layer is substantially coplanar with the top surface of the first portion of the first conductive feature and
- a second conductive feature disposed over the first conductive feature and the second dielectric layer such that the second conductive feature physically contacts the entire top surface of the first portion of the first conductive feature and the entire top surface of the second dielectric layer.
1 more element
Dependencies are inferred from the claim text.