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US 9,287,198 B2Granted
Interconnection structure including air gap, semiconductor device including air gap, and method of manufacturing the same
AssigneeSK hynix Inc.
InventorKi Hong Yang
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Abstract
A semiconductor device includes a first insulating layer, a second insulating layer formed on the first insulating layer, a plurality of interconnection lines formed in the second insulating layer, and a first air gap disposed between the first insulating layer and the second insulating layer to surround a lower part of the interconnection lines.
Claims11
A semiconductor device comprising:
- a first insulating layer;
- a second insulating layer formed on the first insulating layer;
- a first air gap disposed between the first insulating layer and the second insulating layer;
- and
- a plurality of interconnection lines formed in the second insulating layer,
- wherein a lower part of the interconnection lines protrudes into the first air gap and is surrounded by the first air gap,
- wherein a height of the first air gap is less than a height of the interconnection lines, and a space between the interconnection lines above the first air gap is filled with the second insulating layer.
4 more elements
An interconnection structure comprising:
- an insulating layer including a plurality of interconnection lines therein;
- a first air gap defined in the insulating layer and positioned between lower portions of the interconnection lines;
- and
- a plurality of second air gaps defined in the insulating layer and positioned between the interconnection lines,
- wherein the lower portions of the interconnection lines are surrounded by the first air gap,
- wherein a height of the first air gap is less than a height of the interconnection lines.
3 more elements
Dependencies are inferred from the claim text.