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US 9,287,197 B2Granted
Through silicon vias
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsBenfu Lin, Hong Yu, Lup San Leong, Alex See, Wei Lu
Life of this patent
Estimating the term…
Abstract
A device and methods for forming a device are disclosed. A substrate is provided and a TSV is formed in the substrate through a top surface of the substrate. The TSV and top surface of the substrate is lined with an insulation stack having a first insulation layer, a polish stop layer and a second insulation layer. A conductive layer is formed on the substrate. The TSV is filled with conductive material of the conductive layer. The substrate is planarized to remove excess conductive material of the conductive layer. The planarizing stops on the polish stop layer to form a planar top surface.
Claims20
A method of forming a device comprising:
- providing a substrate with top and bottom surfaces;
- forming a through silicon via (TSV) in the substrate through the top surface;
- lining the TSV and the top surface of the substrate with an insulation stack having a first insulation layer, a polish stop layer and a second insulation layer, wherein the insulation stack lines without filling the TSV, wherein the polish stop layer lines the first insulation layer and the second insulation layer lines the polish stop layer;
- forming a conductive layer on the substrate, the conductive layer filling the TSV over the insulation stack comprising the first insulation layer, the polish stop layer and the second insulation layer;
- and
- planarizing the substrate to form a top portion of a TSV contact in the TSV, the planarizing removes excess conductive material of the conductive layer and the second insulation layer over the top surface of the substrate, the planarizing stops on the polish stop layer of the insulation stack over the top surface of the substrate, the planarizing leaves the polish stop layer remaining over the top surface of the substrate and a top surface of the conductive material in the TSV is planar with a top surface of the polish stop layer over the top surface of the substrate, forming the top portion of the TSV contact.
3 more elements
A method of forming a device comprising:
- providing a substrate with top and bottom surfaces, the substrate includes a TSV formed through the top surface;
- lining the TSV and the top surface of the substrate with an insulation stack having a first insulation layer, a stop layer and a second insulation layer, wherein the insulation stack lines without filling the TSV, wherein the stop layer lines the first insulation layer and the second insulation layer lines the stop layer;
- forming a conductive layer on the substrate, the conductive layer filling the TSV over the insulation stack comprising the first insulation layer, the stop layer and the second insulation layer;
- and
- removing excess conductive material of the conductive layer and the second insulation layer over the top surface of the substrate selective to the stop layer of the insulation stack over the top surface of the substrate, the removal leaves the stop layer remaining over the top surface of the substrate and a top surface of the conductive material in the TSV is planar with a top surface of the stop layer over the top surface of the substrate, forming a top portion of a TSV contact in the TSV.
2 more elements
A method of forming a device comprising:
- providing a substrate with top and bottom surfaces;
- forming a through silicon via (TSV) in the substrate through the top surface;
- lining the TSV and the top surface of the substrate with an insulation stack having a first oxide layer, a nitride layer and a second oxide layer, wherein the insulation stack lines without filling the TSV, wherein the nitride layer lines the first oxide layer and the second oxide layer lines the nitride layer;
- forming a conductive layer on the substrate, the conductive layer filling the TSV over the insulation stack comprising the first oxide layer, the nitride layer and the second oxide layer;
- and
- planarizing the substrate to form a top portion of a TSV contact in the TSV, the planarizing removes excess conductive material of the conductive layer and the second oxide layer over the top surface of the substrate, the planarizing stops on the nitride layer of the insulation stack over the top surface of the substrate, the planarizing leaves the nitride layer remaining over the top surface of the substrate and a top surface of the conductive material in the TSV is planar with a top surface of the nitride layer over the top surface of the substrate, forming the top portion of the TSV contact.
3 more elements
Dependencies are inferred from the claim text.